A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window-Reference-Cited by-同舟云学术

A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window

Published:2017-05-29 Issue:22 Volume:110 Page:223501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Yuanyuan¹,Yang Tao¹,Yan Xiaobing¹²,Zhang Zichang³,bai Gang⁴,Lu Chao³,Jia Xinlei¹,Ding Bangfu¹,Zhao Jianhui¹,Zhou Zhenyu¹

Affiliation:

1. Key Laboratory of Digital Medical Engineering of Hebei Province, Key Laboratory of Optoelectronic Information Materials of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China

2. Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore 117576

3. Electrical and Computer Engineering Department, Southern Illinois University Carbondale, Illinois, 1230 Lincoln Drive, Carbondale, Illinois 62901, USA

4. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210026, People's Republic of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4984220

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