A study on memory characteristics of hybrid-based charge trap-type organic non-volatile memory device according to gate stack thickness-Reference-Cited by-同舟云学术

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A study on memory characteristics of hybrid-based charge trap-type organic non-volatile memory device according to gate stack thickness

Published:2023-12 Issue: Volume:151 Page:115274
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Jin Jun Hyup,Kim Min Ju

Funder

National Research Foundation of Korea

Korea Ministry of Science and ICT

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Recent advances of flexible data storage devices based on organic nanoscaled materials;Zhou;Small,2018

2. Electrical characterization of organic based transistors: stability issues;Gomes;Polym. Adv. Technol.,2005

3. Novel vapor-phase synthesis of flexible, homogeneous organic–inorganic hybrid gate dielectric with sub 5 nm equivalent oxide thickness;Kim;ACS Appl. Mater. Interfaces,2018

4. Ultrathin ZrO x-organic hybrid dielectric (EOT 3.2 nm) via initiated chemical vapor deposition for high-performance flexible electronics;Kim;ACS Appl. Mater. Interfaces,2019

5. Highly reliable charge trap-type organic non-volatile memory device using advanced band-engineered organic-inorganic hybrid dielectric stacks;Kim;Adv. Funct. Mater.,2021

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