Remarkable charge-trapping efficiency of the memory device with (TiO2)0.8(Al2O3)0.1 composite charge-storage dielectric-Reference-Cited by-同舟云学术

Remarkable charge-trapping efficiency of the memory device with (TiO2)0.8(Al2O3)0.1 composite charge-storage dielectric

Published:2014-06-30 Issue:26 Volume:104 Page:263506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jiang K.¹,Ou X.¹,Lan X. X.²,Cao Z. Y.¹,Liu X. J.¹,Lu W.¹,Gong C. J.²,Xu B.¹,Li A. D.¹,Xia Y. D.¹,Yin J.¹,Liu Z. G.¹

Affiliation:

1. National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China

2. National Laboratory of Solid State Microstructures, and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China

Funder

the State Key Program for Basic Research of China

grants from the National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4885717

Reference29 articles.

1. Performance improvement of flash memory using AlN as charge-trapping Layer

2. Chemical vapor deposition of Ge nanocrystals on SiO2

3. Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments

4. Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

5. Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin-Film Memory Transistors

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced charge trapping characteristics through composite high-k material phase separation;Applied Physics Letters;2023-11-06

2. Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices;Nanomaterials;2023-06-01

3. ZnO nanowire optoelectronic synapse for neuromorphic computing;Nanotechnology;2021-11-19

4. Improving Retention Properties of ALD-AlxOy Charge Trapping Layer for Non-Volatile Memory Application;ECS Journal of Solid State Science and Technology;2020-04-29

5. A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage;RSC Advances;2020