Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3623439
Reference21 articles.
1. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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3. Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments
4. Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications
5. Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Ptcapacitors
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