Improvement of the storage ability of Si-rich oxide layer in poly-Si based nonvolatile memory devices by implementation of taguchi method-Reference-Cited by-同舟云学术

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Improvement of the storage ability of Si-rich oxide layer in poly-Si based nonvolatile memory devices by implementation of taguchi method

Published:2019-08-28 Issue:9 Volume:34 Page:095020
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Nguyen Cam Phu Thi^ORCID,Manh Tran Dinh,Le Anh Huy Tuan,Shin Donggi,Kim Youngkuk,Dao Vinh Ai,Yi Junsin^ORCID

Funder

National Research Foundation of Korea(NRF) grant funded by the Korea government

Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/ab36f9/pdf

Reference32 articles.

1. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

2. Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

3. Flash memory cells-an overview

4. Nanofloating Gate Memory Devices Based on Controlled Metallic Nanoparticle-Embedded InGaZnO TFTs

5. Fabrication of SiO2/SiOx/SiOxNy Non-Volatile Memory with Transparent Amorphous Indium Gallium Zinc Oxide Channels

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