Selective growth and associated faceting and lateral overgrowth of GaAs on a nanoscale limited area bounded by a SiO2 mask in molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1512967
Reference9 articles.
1. Nanoscale selective growth of GaAs by molecular beam epitaxy
2. Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
3. Dynamical faceting and nanoscale lateral growth of GaAs by molecular beam epitaxy
4. Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffraction
5. Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy
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