Selective area epitaxy of GaAs films using patterned graphene on Ge
Author:
Affiliation:
1. Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Funder
Defense Advanced Research Projects Agency
National Science Foundation
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0078774
Reference33 articles.
1. Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
2. Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks
3. Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces
4. Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
5. Epitaxial necking in GaAs grown on pre-pattemed Si substrates
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