Atomic Level Insight into the Nucleation of SnSe Thin Films Using Graphene Mask in Molecular Beam Epitaxy: ReaxFF Molecular Dynamics Simulations-Reference-Cited by-同舟云学术

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Atomic Level Insight into the Nucleation of SnSe Thin Films Using Graphene Mask in Molecular Beam Epitaxy: ReaxFF Molecular Dynamics Simulations

Published:2024-08-19 Issue:34 Volume:128 Page:14294-14304
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Fazlioglu-Yalcin Benazir¹,Wang Mengyi²^ORCID,Nayir Nadire³⁴^ORCID,Law Stephanie²^ORCID,van Duin Adri C. T.⁴^ORCID

Affiliation:

1. Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States

2. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

3. Department of Physics Engineering, Istanbul Technical University, Istanbul 34469, Turkey

4. Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.4c03096

Reference64 articles.

1. Routes to tin chalcogenide materials as thin films or nanoparticles: a potentially important class of semiconductor for sustainable solar energy conversion

2. New two-dimensional phase of tin chalcogenides: Candidates for high-performance thermoelectric materials

3. Tin and germanium monochalcogenide IV–VI semiconductor nanocrystals for use in solar cells

4. The journey of tin chalcogenides towards high-performance thermoelectrics and topological materials

5. Tin Selenide (SnSe): Growth, Properties, and Applications

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