Controlling the Balance between Remote, Pinhole, and van der Waals Epitaxy of Heusler Films on Graphene/Sapphire-Reference-Cited by-同舟云学术

Controlling the Balance between Remote, Pinhole, and van der Waals Epitaxy of Heusler Films on Graphene/Sapphire

Published:2022-10-07 Issue:21 Volume:22 Page:8647-8653
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Du Dongxue¹,Jung Taehwan¹^ORCID,Manzo Sebastian¹,LaDuca Zachary¹,Zheng Xiaoqi¹,Su Katherine¹,Saraswat Vivek¹,McChesney Jessica²,Arnold Michael S.¹,Kawasaki Jason Ken¹^ORCID

Affiliation:

1. Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin53706, United States of America

2. Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois60439, United States of America

Funder

Army Research Office

Basic Energy Sciences

Air Force Office of Scientific Research

Division of Materials Research

Department of Energy

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c03187

Reference27 articles.

1. Remote epitaxy through graphene enables two-dimensional material-based layer transfer

2. Polarity governs atomic interaction through two-dimensional materials

3. Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy

4. Carrier lifetime enhancement in halide perovskite via remote epitaxy

5. Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer

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