Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332317
Reference6 articles.
1. Application of molecular-beam epitaxial layers to heterostructure lasers
2. High‐purity GaAs and Cr‐doped GaAs epitaxial layers by MBE
3. Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam Epitaxy
4. Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy
5. Interaction kinetics of As2 and Ga on {100} GaAs surfaces
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