Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329470
Reference10 articles.
1. Epitaxy of silicon doped gallium arsenide by molecular beam method
2. The effect of As2and As4molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs
3. Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE
4. Measurement of MIS capacitors with oxygen‐doped AlxGa1−xAs insulating layers on GaAs
5. Volatile metal‐oxide incorporation in layers of GaAs, Ga1−xAlxAs and related compounds grown by molecular beam epitaxy
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1. Spontaneous superlattice structures in AlxGa1−xAs/GaAs (1 0 0) grown by metalorganic vapor phase epitaxy;Materials Letters;2018-01
2. Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires;Applied Physics Letters;2016-08-29
3. Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases;Journal of Crystal Growth;2016-05
4. Peculiarities of photoluminescence of vertical n +/n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors;Applied Physics A;2015-06-26
5. Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1−xN active regions;Nanotechnology;2014-10-20
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