Peculiarities of photoluminescence of vertical n +/n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors-Reference-Cited by-同舟云学术

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Peculiarities of photoluminescence of vertical n +/n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors

Published:2015-06-26 Issue:3 Volume:120 Page:1133-1140
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Čerškus Aurimas,Kundrotas Jurgis,Sužiedėlis Algirdas,Gradauskas Jonas,Ašmontas Steponas,Johannessen Eric,Johannessen Agne

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-015-9292-z.pdf

Reference42 articles.

1. W.T. Tsang (ed.), Lightwave Communications Technology: Part A, Material Growth Technologies (Academic Press, Orlando, 1985)

2. G.B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice (Academic Press, San Diego, 1999)

3. P. Dapkus, J. Cryst. Growth 68(1), 345 (1984)

4. M. Razeghi, The MOCVD Challenge: A Survey of GaInAsP-InP and GaInAsP-GaAs for Photonic and Electronic Device Applications (CRC Press, Boca Raton, 2011)

5. A. Lechner, M. Kneidinger, R. Kuch, Electron. Lett. 16(1), 1 (1980)

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