Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1−xN active regions-Reference-Cited by-同舟云学术

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Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1−xN active regions

Published:2014-10-20 Issue:45 Volume:25 Page:455201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Kent Thomas F,Carnevale Santino D,Sarwar A T M,Phillips Patrick J,Klie Robert F,Myers Roberto C

Funder

Army Research Office

National Science Foundation Graduate Reserach Fellowship

Division of Materials Research

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/25/i=45/a=455201/pdf

Reference27 articles.

1. AlGaN Deep-Ultraviolet Light-Emitting Diodes

2. Deep-Ultraviolet Light-Emitting Diodes

3. Advances in group III-nitride-based deep UV light-emitting diode technology

4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

5. Mg-doped Al-rich AlGaN alloys for deep UV emitters

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2. Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires;Nanotechnology;2023-09-01

3. Multipurpose active scanning probe cantilevers for near-field spectroscopy, scanning tunnel imaging, and atomic-resolution lithography;Journal of Vacuum Science & Technology B;2023-06-06

4. Inverse Tapered AlGaN Micropillar and Nanowire LEDs for Improved Light Extraction Efficiency at 270 nm;IEEE Photonics Journal;2022-12

5. Vertical AlGaN Deep Ultraviolet Light Emitting Diodes with Polarization Enhanced p-AlGaN Epilayer on Si Substrate;ECS Journal of Solid State Science and Technology;2022-06-01

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