Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125608
Reference8 articles.
1. Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials
2. High-power InGaN-based blue laser diodes with a long lifetime
3. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
4. Damage of coherent multilayer structures by injection of dislocations or cracks
5. Damage of coherent multilayer structures by injection of dislocations or cracks
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