High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach-Reference-Cited by-同舟云学术

High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach

Published:2019-04-10 Issue:6 Volume:19 Page:3085-3091
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Ironside Daniel J.¹^ORCID,Skipper Alec M.¹,Leonard Thomas A.¹,Radulaski Marina²,Sarmiento Tomas²,Dhingra Pankul³,Lee Minjoo L.³,Vučković Jelena²,Bank Seth R.¹

Affiliation:

1. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States

2. E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States

3. Micro and Nanotechnology Lab, University of Illinois Urbana−Champaign, Urbana, Illinois 61801, United States

Funder

Division of Graduate Education

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.8b01671

Reference40 articles.

1. InGaN-based light-emitting diodes with an embedded conical air-voids structure

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3. Selective area growth of InAs quantum dots formed on a patterned GaAs substrate

4. Homogeneous Array of Nanowire-Embedded Quantum Light Emitters

5. Photonic-Crystal Surface-Emitting Lasers: Review and Introduction of Modulated-Photonic Crystals

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