High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference13 articles.
1. The role of threading dislocations in the physical properties of GaN and its alloys
2. Spontaneous polarization and piezoelectric constants of III-V nitrides
3. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
4. Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes
5. High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
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1. Controlled formation of three-dimensional cavities during lateral epitaxial growth;Nature Communications;2024-03-13
2. Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes;PLOS ONE;2022-11-17
3. Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates;ACS Omega;2022-10-21
4. Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics;Progress in Quantum Electronics;2021-05
5. Hexagonally connected submicron hollow veins for high efficiency, narrow beam organic emitters;Photonics and Nanostructures - Fundamentals and Applications;2021-02
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