(InAs)1/(GaAs)4superlattices quantum‐well laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106462
Reference10 articles.
1. A New High-Electron Mobility Monolayer Superlattice
2. Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures
3. Optical investigation of the band structure of InAs/GaAs short‐period superlattices
4. Molecular‐beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation‐doped field‐effect transistor
5. Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin‐layer structures
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1. Tight-binding calculations of energy gaps in (001)-(InAs)n(InSb)m strained superlattices;Journal of Applied Physics;2000-05
2. LP-MOCVD grown (lnAs)m(GaAs)m short period superlattices on InP;Journal of Electronic Materials;1996-03
3. Theory of quasiequilibrium nonlinear optical absorption in semiconductor superlattices;Applied Physics Letters;1995-11-13
4. Strained InAs/InP quantum well heterostructure lasers grown by low‐pressure metalorganic chemical vapor deposition;Applied Physics Letters;1994-08
5. The performances of (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice strained single-quantum-well laser on GaAs substrate;IEEE Journal of Quantum Electronics;1994-04
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