Indium diffusion through high-k dielectrics in high-k/InP stacks-Reference-Cited by-同舟云学术

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Indium diffusion through high-k dielectrics in high-k/InP stacks

Published:2013-08-05 Issue:6 Volume:103 Page:061601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dong H.,Cabrera W.,Galatage R. V.,Santosh KC ,Brennan B.,Qin X.,McDonnell S.,Zhernokletov D.,Hinkle C. L.,Cho K.,Chabal Y. J.,Wallace R. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4817932

Reference29 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

3. III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

4. Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

5. A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

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3. In situ isotope study of indium diffusion in InP/Al₂O₃ stacks;Applied Physics Letters;2022-01-17

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