Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure-Reference-Cited by-同舟云学术

Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure

Published:2021-04-26 Issue:17 Volume:118 Page:173502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Simanjuntak Firman Mangasa¹²^ORCID,Chandrasekaran Sridhar³^ORCID,Panda Debashis⁴^ORCID,Rajasekaran Sailesh⁵^ORCID,Rullyani Cut⁵^ORCID,Madhaiyan Govindasamy⁶,Prodromakis Themistoklis¹^ORCID,Tseng Tseung-Yuen²^ORCID

Affiliation:

1. Centre for Electronics Frontiers, University of Southampton, Southampton SO17 1BJ, United Kingdom

2. Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

3. Advanced Research Institute, Dr. MGR Educational and Research Institute, Chennai 600095, India

4. Department of Physics, National Institute of Science and Technology, Berhampur 761 008, India

5. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

6. Institute of Physics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0047036

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1. The era of hyper-scaling in electronics

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