Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4776656
Reference27 articles.
1. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
2. Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces
3. 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density
4. Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors
5. Effects of passivating ionic films on the photoluminescence properties of GaAs
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