Affiliation:
1. Hewlett Packard Labs Hewlett Packard Enterprise Milpitas CA 95035 USA
2. Department of Electrical and Computer Engineering University of Washington Seattle WA 98195 USA
3. Department of Physics University of Washington Seattle WA 98195 USA
Abstract
AbstractSilicon photonics has evolved from lab research to commercial products in the past decade as it plays an increasingly crucial role in data communication for next‐generation data centers and high‐performance computing. Recently, programmable silicon photonics has also found new applications in quantum and classical information processing. A key component of programmable silicon photonic integrated circuits (PICs) is the phase shifter, traditionally realized via thermo‐optic or free‐carrier effects that are weak, volatile, and power hungry. A non‐volatile phase shifter can circumvent these limitations by requiring zero power to maintain the switched phases. Previously non‐volatile phase modulation is achieved via phase‐change or ferroelectric materials, but the switching energy remains high (pico to nano joules) and the speed is slow (micro to milliseconds). Here, a non‐volatile III‐V‐on‐silicon photonic phase shifter based on a HfO2 memristor with sub‐pJ switching energy (≈400 fJ), representing over an order of magnitude improvement in energy efficiency compared to the state of the art, is reported. The non‐volatile phase shifter can be switched reversibly using a single 100 ns pulse and exhibits excellent endurance over 800 cycles. This technology can enable future energy‐efficient programmable PICs for data centers, optical neural networks, and quantum information processing.
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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