Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors-Reference-Cited by-同舟云学术

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Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors

Published:2011-04-04 Issue:14 Volume:98 Page:142901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hwang Yoontae,Chobpattana Varistha,Zhang Jack Y.,LeBeau James M.,Engel-Herbert Roman,Stemmer Susanne

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3575569

Reference18 articles.

1. InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

2. Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks

3. Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

4. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

5. On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

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4. Effective surface passivation of In0.53Ga0.47As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study;Journal of Crystal Growth;2017-11

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