Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3465524
Reference20 articles.
1. Capacitance–Voltage Characterization of GaAs–Oxide Interfaces
2. Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces
3. Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods
4. Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics
5. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
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