A highly ordered and damage-free Ge inverted pyramid array structure for broadband antireflection in the mid-infrared-Reference-Cited by-同舟云学术

A highly ordered and damage-free Ge inverted pyramid array structure for broadband antireflection in the mid-infrared

Published:2021 Issue:31 Volume:9 Page:9884-9891
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Shin Sang-Ho¹²³,Liao Yikai¹²³,Son Bongkwon¹²³,Zhao Zhi-Jun⁴⁵⁶⁷⁸,Jeong Jun-Ho⁴⁵⁶⁷⁸^ORCID,Tan Chuan Seng¹²³,Kim Munho¹²³^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering

2. Nanyang Technological University

3. Singapore

4. Nano-Convergence Mechanical Systems Research Division

5. Korea Institute of Machinery and Materials

6. 156

7. Gajeongbuk-ro

8. Yuseong-gu

Abstract

A highly ordered and damage-free microscale Ge inverted pyramid array is fabricated by HF-free metal-assisted chemical etching. The inverted pyramid exhibits significant broadband antireflection properties in the mid-infrared region.

Funder

Agency for Science, Technology and Research

Ministry of Education - Singapore

National Research Foundation Singapore

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01134K

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