Structural and morphologic evolution of Pt/Ba0.7Sr0.3TiO3/Pt capacitors with annealing processes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1469683
Reference14 articles.
1. Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application
2. Structure/property relationships in ferroelectric thin films for frequency agile microwave electronics
3. High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories
4. The effects of forming gas anneal on the electrical characteristics of ir-electroded BST thin film capacitors
5. Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories
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2. Critical Effect of Film–Electrode Interface on Enhanced Energy Storage Performance of BaTiO3–BiScO3 Ferroelectric Thin Films;ACS Applied Electronic Materials;2021-10-27
3. Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere;Applied Physics Letters;2014-01-27
4. On the formation of an interface amorphous layer in nanostructured ferroelectric Ba0.8Sr0.2TiO3 thin films integrated on Pt–Si and its effect on the electrical properties;Applied Surface Science;2013-08
5. Tunable photovoltaic effects in transparent Pb(Zr0.53,Ti0.47)O3 capacitors;Applied Physics Letters;2012-04-23
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