The effects of forming gas anneal on the electrical characteristics of ir-electroded BST thin film capacitors-Reference-Cited by-同舟云学术

The effects of forming gas anneal on the electrical characteristics of ir-electroded BST thin film capacitors

Published:1997-09 Issue:1-4 Volume:17 Page:461-469
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Hadad Daniel¹,Chen Tung-Sheng¹,Balu Venkatasubramani¹,Jiang Bo¹,Kuah Shao H.¹,McIntyre Paul²,Summerfelt Scott²,Mark Anthony J.²,Lee Jack C.¹

Affiliation:

1. a Microelectronics Research Center , University of Texas at Austin , Austin, TX, 78758

2. b Materials Science Laboratory , Texas Instruments, Inc. , TX, 75243

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708013020

Reference3 articles.

1. Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application

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