High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories

Abstract

An important application of ferroelectric films is their incorporation into dynamic random-access memories (DRAMs) as the storage node capacitor dielectric. Dynamic random-access memories represent a large market that is experiencing strong growth, but they are particularly significant as the technology leader for semiconductor devices. As products move to higher and higher integration density, new developments are first introduced in DRAMs. The steady trend toward higher density has placed severe demands on the device designs, particularly with respect to “squeezing” the capacitor into the available space.