On the formation of an interface amorphous layer in nanostructured ferroelectric Ba0.8Sr0.2TiO3 thin films integrated on Pt–Si and its effect on the electrical properties-Reference-Cited by-同舟云学术

On the formation of an interface amorphous layer in nanostructured ferroelectric Ba0.8Sr0.2TiO3 thin films integrated on Pt–Si and its effect on the electrical properties

Published:2013-08 Issue: Volume:278 Page:136-141
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Silva J.P.B.,Sekhar K.C.,Rodrigues S.A.S.,Pereira M.,Parisini A.,Alves E.,Barradas N.P.,Gomes M.J.M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. Ferroelectric Memories;Scott,2000

2. Post-annealing in oxygen ambient for (Ba,Sr)TiO3 thin films prepared by pulsed laser deposition

3. Structural and optical characterization of Ba0.8Sr0.2TiO3 PLD deposited films

4. Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors

5. Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitors

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