Molecular dynamics study of Si(100)-oxidation: SiO and Si emissions from Si/SiO2 interfaces and their incorporation into SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4876911
Reference49 articles.
1. Atomistic modeling of strain and diffusion at theSi/SiO2interface
2. Ab Initio Study on Thermal and Chemical Stabilities of Silicon Monoxide Clusters
3. Reactive molecular dynamics simulation of early stage of dry oxidation of Si (100) surface
4. Interstitial oxygen molecules in amorphous SiO2. III. Measurements of dissolution kinetics, diffusion coefficient, and solubility by infrared photoluminescence
5. Multiscale modeling of oxygen diffusion through the oxide during silicon oxidation
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3. Roles of strain and carrier in silicon oxidation;Japanese Journal of Applied Physics;2020-04-24
4. Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state;Applied Surface Science;2019-11
5. Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SiC;Journal of Applied Physics;2018-10-07
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