Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SiC
Author:
Affiliation:
1. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5041794
Reference39 articles.
1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
2. SiC and GaN devices – wide bandgap is not all the same
3. Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons
4. Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's
5. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control;Defect and Diffusion Forum;2024-08-22
2. Oxidation of SiC fibers in water vapor;Journal of the American Ceramic Society;2024-05-18
3. Generation of deep levels near the 4H-SiC surface by thermal oxidation;Applied Physics Express;2024-04-01
4. Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO2 deposition and CO2 annealing;Applied Physics Express;2023-07-01
5. Effect of carbon atoms on the reliability of potassium-ion electrets used in vibration-powered generators;Japanese Journal of Applied Physics;2022-06-21
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3