Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SiC
Author:
Affiliation:
1. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5041794
Reference39 articles.
1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
2. SiC and GaN devices – wide bandgap is not all the same
3. Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons
4. Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's
5. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
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