Surface passivation effects of As2S3glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104114
Reference15 articles.
1. Emitter-Base Junction Size Effect on Current GainHfeof AlGaAs/GaAs Heterojunction Bipolar Transistors
2. Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors
3. Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift Motion
4. Measurement of high boron concentrations in silicon by infrared spectroscopy
5. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
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1. Effect of Formal Passivations on Temperature-Dependent Characteristics of High Electron Mobility Transistors;Journal of The Electrochemical Society;2007
2. The Effect of Sulfur Treatment on the Temperature-Dependent Performance of InGaP/GaAs HBTs;IEEE Transactions on Device and Materials Reliability;2006-12
3. Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface;Superlattices and Microstructures;2005-06
4. Current gain increase by SiNx passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base;Solid-State Electronics;2004-09
5. Sulphur passivation of the InGaAsSb/GaSb photodiodes;Applied Physics Letters;2002-02-18
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