Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface-Reference-Cited by-同舟云学术

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Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface

Published:2005-06 Issue:6 Volume:37 Page:401-409
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Tan Shih-Wei,Chen Hon-Ren,Chu Min-Yuan,Chen Wei-Tien,Lin An-Hung,Hsu Meng-Kai,Lin Tien-Sheng,Lour Wen-Shiung

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. High reliability InGaP/GaAs HBT

2. Advanced heterostructure transistor technologies for wireless communications

3. Reliability of III–V based heterojunction bipolar transistors

4. An ImprovedIn0.5Ga0.5P/GaAsDouble Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique

5. A new InGaP/GaAs double delta-doped heterojunction bipolar transistor (D 3 HBT)

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments;Superlattices and Microstructures;2009-10

2. Integrated a ZnSe MSM Photodiode and an InGaP/GaAs HBT on a GaAs Substrate for High Sensitivity Short Wavelength Photodetector;IEEE Sensors Journal;2009-08

3. Monolithic integration of a ZnS MSM photodiode and an InGaP/GaAs HBT on a GaAs substrate;Semiconductor Science and Technology;2009-03-06

4. Effect of Emitter Ledge Thickness on InGaP∕GaAs Heterojunction Bipolar Transistors;Electrochemical and Solid-State Letters;2009

5. Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor;Superlattices and Microstructures;2008-04

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