Current gain increase by SiNx passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base-Reference-Cited by-同舟云学术

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Current gain increase by SiNx passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base

Published:2004-09 Issue:9 Volume:48 Page:1637-1641
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jin Z,Otten F,Reimann T,Neumann S,Prost W,Tegude F.-J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment

2. Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors

3. Passivation of InP-based HBTs

4. Studies on the Degradation of InP/InGaAs/InP Double Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation

5. Passivation of InP-Based Heterostructure Bipolar Transistors in Relation to Surface Fermi Level

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface-recombination-free InGaAs/InP HBTs and the base contact recombination;Solid-State Electronics;2008-07

2. Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR–CVD plasma;Applied Surface Science;2008-07

3. Passivation of InP-based HBTs;Applied Surface Science;2006-08

4. Efficacy of ECR-CVD silicon nitride passivation in InGaP∕GaAs HBTs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

5. The low-temperature a-SiNx films with high impermeability and high optical gap with application to organic light-emitting diode;Journal of Applied Physics;2005-10-15

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