Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors

Published:1992-02 Issue:2 Volume:13 Page:83-85
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Q.,Li P.W.,Osgood R.M.,Wang W.I.,Yang E.S.,Lu Z.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/3884/00144966.pdf?arnumber=144966

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1. X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source;Japanese Journal of Applied Physics;2012-01-01

2. X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source;Japanese Journal of Applied Physics;2011-12-26

3. Correlation Between Composition and Stress for High Density Plasma CVD Silicon Nitride Films;Journal of The Electrochemical Society;2010

4. Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source;Journal of Crystal Growth;2009-05

5. Efficacy of ECR-CVD silicon nitride passivation in InGaP∕GaAs HBTs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

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