Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR

登录注册会员服务联系我们

Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR–CVD plasma

Published:2008-07 Issue:19 Volume:254 Page:6063-6066
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Manera L.T.,Zoccal L.B.,Diniz J.A.,Tatsch P.J.,Doi I.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference6 articles.

1. Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNx

2. Current gain increase by SiNx passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base

3. Proceedings of the International Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS—IMOC ‘99, vol. 1;Yoshioka,1999

4. Efficacy of ECR-CVD silicon nitride passivation in InGaP∕GaAs HBTs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the AlGaInP-bulk and AlGaInP/GaAs-superlattice confinement effects for heterostructure-emitter bipolar transistors;Applied Physics Letters;2015-02-09

2. An XPS study on the structure of SiNx film deposited by microwave ECR magnetron sputtering;Acta Physica Sinica;2009

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP