Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121941
Reference15 articles.
1. Recombination at semiconductor surfaces and interfaces
2. Emitter-Base Junction Size Effect on Current GainHfeof AlGaAs/GaAs Heterojunction Bipolar Transistors
3. Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces
4. InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus ICcharacteristic
5. Effects of passivating ionic films on the photoluminescence properties of GaAs
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