Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342452
Reference9 articles.
1. Emitter-Base Junction Size Effect on Current GainHfeof AlGaAs/GaAs Heterojunction Bipolar Transistors
2. Influences of AlGaAs Emitter Band Gaps on Current Gains in AlGaAs/GaAs HBTs
3. The effect of surface recombination on current in AlxGa1−xAs heterojunctions
4. Symmetric-gain, zero-offset, self-aligned, and refractory-contact double HBT's
5. MONTE: A Program to Simulate the Heterojunction Devices in Two Dimensions
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