Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. High-performance Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFET's grown by gas-source MBE
2. High reliability InGaP/GaAs HBT
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1. TRANSIT TIME MODEL ANALYSIS THROUGH THE BASIS IN THE CASE OF DRIFT TRANSISTORS HBT;Journal of Science and Arts;2022-06-30
2. Electronic properties of Ga In1−P ternary alloy from first-principles;Computational Materials Science;2016-07
3. Design of broadband class-F power amplifier for multiband LTE handsets applications;Journal of Semiconductors;2015-08
4. Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well;Journal of Semiconductors;2013-07
5. The impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor;Acta Physica Sinica;2013
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