Electronic properties of Ga In1−P ternary alloy from first-principles
Author:
Publisher
Elsevier BV
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
Reference45 articles.
1. Band parameters for III–V compound semiconductors and their alloys
2. Physical Properties of III–V Semiconductor Compounds: InP, InP, InAs, GaAs, GaP, InGaAs and InGaAsP;Adachi,1992
3. Electronic structure of ternary alloy semiconductors
4. Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP
5. A new realisation of Schottky diodes on n-type InP
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Cu-Doped KCl Unfolded Band Structure and Optical Properties Studied by DFT Calculations;Materials;2020-09-26
2. Optical characteristics of dilute gallium phosphide bismide: Promising material for near-infra photonic device applications;Physics Letters A;2020-02
3. Modeling and experimental demonstration of short-wavelength carrier collection enhancement in Ga0.51In0.49P solar cells using graded (AlzGa1-z)xIn1-xP window-emitter structures;Solar Energy Materials and Solar Cells;2019-11
4. Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation;ChemistryOpen;2019-03
5. Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1);Computational Materials Science;2018-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3