Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation-Reference-Cited by-同舟云学术

Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation

Published:2019-03 Issue:3 Volume:8 Page:393-398
ISSN:2191-1363
Container-title:ChemistryOpen
language:en
Short-container-title:ChemistryOpen

Author:

Pluengphon Prayoonsak¹^ORCID,Wanarattikan Pornsiri¹,Bovornratanaraks Thiti²³^ORCID,Inceesungvorn Burapat⁴

Affiliation:

1. Division of Physical ScienceFaculty of Science and TechnologyHuachiew Chalermprakiet University Samutprakarn 10540 Thailand

2. Extreme Conditions Physics Research LaboratoryPhysics of Energy Materials Research UnitDepartment of Physics, Faculty of ScienceChulalongkorn University Bangkok 10330 Thailand

3. Thailand Center of Excellence in PhysicsCommission on Higher Education 328 Si-Ayuttaya Road Bangkok 10400 Thailand

4. Department of ChemistryCenter of Excellence for Innovation in Chemistry (PERCH-CIC)Center of Excellence in Materials Science and TechnologyFaculty of ScienceChiang Mai University Chiang Mai 50200 Thailand

Funder

Chiang Mai University

National Research Council of Thailand

Commission on Higher Education

Ministry of Education

Thailand Research Fund

Publisher

Wiley

Subject

General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/open.201900018