The effect of surface recombination on current in AlxGa1−xAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325265
Reference24 articles.
1. Electroluminescent shifting‐peak spectra in GaAs with uniform excitation
2. Surface effects of GaAs0·6P0·4 light emitting diodes
3. Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasers
4. Detailed light‐current‐voltage analysis of GaP electroluminescent diodes
5. Effect of surface treatment on surface recombination velocity and diode leakage current in GaP
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