Measurement of high boron concentrations in silicon by infrared spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96395
Reference5 articles.
1. Impurity lines of boron and phosphorus in silicon
2. Simultaneous determination of the total content of boron and phosphorus in high‐resistivity silicon by ir spectroscopy at low temperatures
3. INFRARED ABSORPTION LINES IN BORON-DOPED SILICON
4. Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductors
5. Net and total shallow impurity analysis of silicon by low temperature fourier transform infrared spectroscopy
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1. EM Acceptor Spectra;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009
2. Laser infrared photothermal radiometry of semiconductors: principles and applications to solid state electronics;Solid-State Electronics;1998-01
3. Chapter 6 Photothermal Deep-Level Transient Spectroscopy of Impurities and Defects in Semiconductors;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
4. References;Optical Characterization of Semiconductors;1993
5. Surface passivation effects of As2S3glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors;Applied Physics Letters;1990-11-12
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