Simultaneous determination of the total content of boron and phosphorus in high‐resistivity silicon by ir spectroscopy at low temperatures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88474
Reference13 articles.
1. Ionized-Impurity Scattering Mobility of Electrons in Silicon
2. Shallow Impurity Traps and Electron Transfer Dynamics inn-Type Silicon at Liquid Helium Temperatures
3. High resolution photoconductivity studies of residual shallow donors in ultrapure Ge
4. High resolution fourier transform spectroscopy of shallow acceptors in ultra-pure germanium
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