Bonding and electronic states of boron in silicon nanowires characterized by an infrared synchrotron radiation beam-Reference-Cited by-同舟云学术

Bonding and electronic states of boron in silicon nanowires characterized by an infrared synchrotron radiation beam

Published:2015 Issue:16 Volume:7 Page:7246-7251
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Fukata N.¹²³,Jevasuwan W.¹²³,Ikemoto Y.⁴⁵,Moriwaki T.⁴⁵

Affiliation:

1. International Center for Materials Nanoarchitectonics

2. National Institute for Materials Science

3. Tsukuba, Japan

4. Japan Synchrotron Radiation Research Institute

5. Sayo, Japan

Abstract

The first report of B local vibrational peaks and electronic transitions of a bound hole from the ground state of a B acceptor atom to excited states by means of micro-FT-IR measurements using an IR-SR beam.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR00427F

Reference40 articles.

1. Nanowire electronic and optoelectronic devices

2. Semiconductor Nanowires for Energy Conversion

3. Colloquium: Structural, electronic, and transport properties of silicon nanowires

4. Silicon Nanowires for Photovoltaic Solar Energy Conversion

5. Doping and Electrical Transport in Silicon Nanowires

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