Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4758486
Reference30 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
2. High-mobility Si and Ge structures
3. Enhancement of radiative recombination in Si‐based quantum wells with neighboring confinement structure
4. Improved hole mobilities and thermal stability in a strained‐Si∕strained‐Si1−yGey∕strained‐Si heterostructure grown on a relaxed Si1−xGex buffer
5. SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy
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1. Photovoltaic Ge/SiGe quantum dot mid-infrared photodetector enhanced by surface plasmons;Optics Express;2017-10-06
2. Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers;Semiconductors;2016-12
3. Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures;Semiconductors;2016-12
4. Epitaxial growth of Ge 1– x Sn x films with x up to 0.14 grown on Ge (00l) at low temperature;Chinese Physics B;2014-07-31
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