Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures-Reference-Cited by-同舟云学术

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Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

Published:2016-12 Issue:12 Volume:50 Page:1630-1634
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Novikov A. V.,Shaleev M. V.,Yurasov D. V.,Yunin P. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782616120137.pdf

Reference15 articles.

1. K. Brunner, Rep. Progr. Phys. 65, 27 (2002).

2. J.-N. Aqua, I. Berbezier, L. Favre, T. Frisch, and A. Ronda, Phys. Rep. 522, 59 (2013).

3. J. Tersoff, B. J. Spencer, and A. Rastelli, H. von Kanel, Phys. Rev. Lett. 89, 196104 (2002).

4. A. Rastelli, H. von Kanel, Surf. Sci. 532, 769 (2003).

5. A. Vailionis, B. Cho, G. Glass, P. Desjardins, D.G. Cahill, and J. E. Greene, Phys. Rev. Lett. 85, 3672 (2000).

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