Epitaxial growth of Ge 1– x Sn x films with x up to 0.14 grown on Ge (00l) at low temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/8/088112/pdf
Reference28 articles.
1. Ge1−xSnx alloys pseudomorphically grown on Ge(001)
2. Quantum-confinement effect in individual Ge1−xSnx quantum dots on Si(111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy
3. Raman scattering from fully strained Ge1−xSnx (x⩽0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy
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1. Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing;Applied Surface Science;2024-06
2. Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004);Materials Research Express;2020-03-01
3. UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices;Optical Materials Express;2019-07-10
4. A hybrid functional first-principles study on the band structure of non-strained Ge 1− x Sn x alloys;Chinese Physics B;2017-12
5. Comparison study of the low temperature growth of dilute GeSn and Ge;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11
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