Raman scattering from fully strained Ge1−xSnx (x⩽0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368286
Reference21 articles.
1. Band Structure of Gray Tin
2. Synthesis of metastable, semiconducting Ge‐Sn alloys by pulsed UV laser crystallization
3. Electronic properties of metastableGexSn1−xalloys
4. Band structure and instability of Ge1−xSnx alloys
5. Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures
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4. Self-organized Ge1−x Sn x quantum dots formed on insulators and their room temperature photoluminescence;Japanese Journal of Applied Physics;2023-07-01
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