Local Alloy Order in a Ge1−xSnx/Ge Epitaxial Layer
Author:
Funder
Air Force Office of Scientific Research
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.20.024021/fulltext
Reference49 articles.
1. Recent progress in GeSn growth and GeSn-based photonic devices
2. Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si
3. Optically Pumped GeSn Microdisk Lasers on Si
4. Strain and Band-Gap Engineering in Ge - Sn Alloys via P Doping
5. (Invited) Thermoelectric Properties of Tin-Incorporated Group-IV Thin Films
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1. Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge1−xSnx;Physical Review Materials;2024-02-01
2. The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks;physica status solidi (RRL) – Rapid Research Letters;2023-11-20
3. Role of local atomic short-range order distribution in alloys: Why it matters in Si-Ge-Sn alloys;Physical Review Materials;2023-11-13
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