4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption-Reference-Cited by-同舟云学术

4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption

Published:2015-03-14 Issue:10 Volume:117 Page:105309
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Suvanam S. S.¹^ORCID,Gulbinas K.²,Usman M.³,Linnarson M. K.¹,Martin D. M.¹,Linnros J.¹,Grivickas V.²,Hallén A.¹

Affiliation:

1. KTH, Royal Institute of Technology, ICT, Electrum 229, 16440 Kista, Sweden

2. Institute of Applied Research, Vilnius University, LT-10222 Vilnius, Lithuania

3. Experimental Physics Laboratories, National Centre for Physics, Quaid-i-Azam University, Islamabad 44000, Pakistan

Funder

ï¿½?Forsk

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914521

Reference33 articles.

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4. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

5. Reduction of doping and trap concentrations in 4H–SiC epitaxial layers grown by chemical vapor deposition

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